2006-02-14 page 1 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 sipmos ? ? ? ? = == = power-transistor product summary v ds 100 v r ds ( on ) 26 m i d 47 a feature n-channel enhancement mode logic level 175c operating temperature avalanche rated d v /d t rated p-to263-3-2 p-to220-3-1 p-to262-3-1 marking n10l26 n10l26 n10l26 type package ordering code ipp47n10sl-26 p g-to220-3-1 sp0002-25707 ipb47n10sl-26 p g-to263-3-2 sp0002-25701 IPI47N10SL-26 p g-to262-3-1 sp0002-25704 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c =25c t c =100c i d 47 33 a pulsed drain current t c =25c i d puls 188 avalanche energy, single pulse i d =47 a , v dd =25v, r gs =25 e as 400 mj avalanche energy, periodic limited by t j max e ar 17.5 reverse diode d v /d t i s =47a, v ds =0v, d i /d t =200a/s d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 175 w operating and storage temperature t j , t st g -55... +175 c iec climatic category; din iec 68-1 55/175/56
2006-02-14 page 2 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 0.85 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =2ma v (br)dss 100 - - v gate threshold voltage, v gs = v ds i d = 2 ma v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =100v, v gs =0v, t j =25c v ds =100v, v gs =0v, t j =150c i dss - - 0.1 - 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 10 100 na drain-source on-state resistance v gs =4.5v, i d =33a r ds(on) - 25 40 m drain-source on-state resistance v gs =10v, i d =33a r ds(on) - 18 26 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2006-02-14 page 3 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =33a 18 36 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 2000 2500 pf output capacitance c oss - 375 470 reverse transfer capacitance c rss - 210 265 turn-on delay time t d(on) v dd =50v, v gs =4.5v, i d =47a, r g =2 - 50 75 ns rise time t r - 100 150 turn-off delay time t d(off) - 50 75 fall time t f - 70 105 gate charge characteristics gate to source charge q gs v dd =80v, i d =47a - 8 12 nc gate to drain charge q gd - 16 24 gate charge total q g v dd =80v, i d =47a, v gs =0 to 10v - 90 135 gate plateau voltage v (p lateau ) v dd =80v, i d =47a - 3.38 - v reverse diode inverse diode continuous forward current i s t c =25c - - 47 a inverse diode direct current, pulsed i sm - - 188 inverse diode forward voltage v sd v gs =0v, i f =94a - 1.1 1.5 v reverse recovery time t rr v r =50v, i f = l s , d i f /d t =100a/s - 80 120 ns reverse recovery charge q rr - 340 510 nc
2006-02-14 page 4 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 20 40 60 80 100 120 140 160 w 190 spp47n10l p tot 2 drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 5 10 15 20 25 30 35 40 45 a 55 spp47n10l i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 10 3 v v ds 0 10 1 10 2 10 3 10 a spp47n10l i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 7.1 s 4 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp47n10l z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2006-02-14 page 5 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 1 2 3 4 v 5.5 v ds 0 10 20 30 40 50 60 70 80 90 100 a 120 spp47n10l i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l p tot = 175 w l 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 50 60 70 80 a 100 i d 0 10 20 30 40 50 60 70 80 90 100 110 m 130 spp47n10l r ds(on) v gs [v] = b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gs 0 5 10 15 20 25 30 35 40 45 50 a 60 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 10 20 30 40 a 55 i d 0 5 10 15 20 25 30 35 40 45 50 s 60 g fs
2006-02-14 page 6 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 33 a, v gs = 4.5 v -60 -20 20 60 100 140 c 200 t j 0 20 40 60 80 100 120 140 m 170 spp47n10l r ds(on) typ 98% 10 gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 2 ma -60 -20 20 60 100 140 c 200 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v 3 v gs(th) min typ max 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 25 30 v 40 v ds 2 10 3 10 4 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spp47n10l i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2006-02-14 page 7 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 13 typ. avalanche energy e as = f ( t j ) par.: i d = 47 a , v dd = 25 v, r gs = 25 25 45 65 85 105 125 145 c 185 t j 0 40 80 120 160 200 240 280 320 mj 400 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 47 a pulsed 0 20 40 60 80 100 120 nc 150 q gate 0 2 4 6 8 10 12 v 16 spp47n10l v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 c 200 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 v 120 spp47n10l v (br)dss
2006-02-14 page 8 IPI47N10SL-26 ipp47n10sl-26, ipb47n10sl-26 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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